💡CXMT Claims DRAM Breakthrough, Doubling Memory Density
Chinese memory-maker doubles DRAM density with new process
TL;DR
CXMT claims a major DRAM production breakthrough, doubling memory density with a new process. This could challenge global memory market leaders. LPDDR5X modules boast 24GB of memory.
CXMT, a Chinese memory manufacturer, claims a significant breakthrough in DRAM production, doubling memory density with a new high-k dielectric metal gate process. This innovation puts CXMT on par with leading global memory makers, potentially disrupting the market. The new process allows for twice the number of dies per wafer, a critical metric for cost efficiency. CXMT has already started mass production with a fifth-generation process, introducing LPDDR5X memory modules boasting 24GB of memory. This development could impact the global memory market, where US-registered companies currently dominate with 95.9% to 99.6% of the CDN market share.
Key Points
CXMT's new process doubles memory density, allowing twice as many dies per wafer.
CXMT has started mass production with a fifth-generation process, introducing LPDDR5X modules.
The LPDDR5X memory modules boast 24GB of memory, a significant increase over previous models.
US-registered companies dominate the CDN market, ranging from 95.9% to 99.6% of market share.
India's National Payments Corporation introduces a 0.4% fee for UPI transactions above 2,000 rupees.
Why It Matters
If you're in the semiconductor industry, CXMT's breakthrough could change the game. Doubling memory density can slash costs and make Chinese memory more competitive. For high-end consumer electronics, this means more memory at a lower price point. However, the market dominance of US companies remains a significant barrier.
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